By Lyakhova S.L.

The systematic learn of the equations of movement for debris of a rotating medium was once initiated by means of Sobolev [1, 2]. those equations vary from the standard Navier-Stokes equations in that they include the time period [v, w], the vector made from the speed via the angular rotation speed, which takes account of the rotation of the reference method.

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2 Temperature depe nde n c e of the Shub nik o v-de Haas oscillations between ]. 7K and 4. 2K. ces grown at 190· on CdTe( 111) IGaAs( 100) substrates. The energy bandgaps were determ1ned from room temperature infrared transmission spectra. The Hall mobilities were measured at 30K except for sample #18124 which was measured at lOK. RH is equal to zero for the transition temperature observed in Hall characterlzation of p-type samples where RH is the Hall coeffic1ent. 0 x x x x x x 10 3 10 3 10 3 10 2 10 2 10 1 of light.

C. Parker (Plenum Pr~ss,New York and Landon 1985), pp. L. Störmer, Surf. A. J. H. Neave, and J. Zhang* Philips Research Laboratories, Red hill , Surrey RH! 5HA, England Abstract Very few methods are avsilable for direct in-situ investigation of crystal growth mechanisms at the atomic level, but the forward scattering geometry of reflection high energy electron diffraction (RHEED) is particularly weIl suited to studies of molecular beam epitaxy (MBE) growth dynamics. After describing the basic concepts of the RH&ED intensity oscillation technique, the influence of multiple scattering effects on the form of the oscillations is demonstrated.

P. Faurie, Appl. Phys. Lett. (Submitted). C. E. :Jones, T. N. Casselman. J. P. Faurie, S. Perkowltz and J. N. Schulman, Appl. Phys. Lett. 47, 140 (1985). G. L. Hansen, J. L. Schmltand T. N. Casselman, J. Appl. Phys. 21, 7099 (1982). J. P. Faurie, J. Reno and M. Boukerche, J. Cry. Growth, 72, 111 (1985). R. Dornhaus and G. Nimtz, Narrow-Gap Semiconductors, Springer Tracts in Modern PhysIcs Vol. 98. Transport Properties of Two-Dimensional Electron and Hole Gases in GaAsj AIGaAs Heterostructures G.